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NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR
FEATURES
* * * * HIGH GAIN BANDWIDTH: fT = 20 GHz
+0.30
HIGH LINEAR GAIN: GL = 12 dB at 1.8 GHz
+0.40-0.05 2
HIGH OUTPUT POWER: P-1dB = 26 dBm at 1.8 GHz
2.050.1 1.250.1
2.00.1
1.25 0.650.65
0.650.65
LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance
3
R57
DESCRIPTION
NEC's NE664M04 is fabricated using NEC's state-of-the-art UHS0 25 GHz fT wafer process. With a transition frequency of 20 GHz, the NE664M04 is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even with low voltage and low current, making this device an excellent choice for the output or driver stage for mobile or fixed wireless applications. The NE664M04 is housed in NEC's low profile/flat lead style "M04" package
1
+0.30-0.05 (leads 1, 3 and ,4)
+0.01
0.590.05
4
PIN CONNECTIONS 1. Emitter 3. Emitter 2. Collector 4. Base
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 100 mA Output Power at 1 dB compression point at VCE = 3.6 V, ICQ = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Cycle Linear Gain at VCE = 3.6 V, ICQ = 20 mA, f = 1.8 GHz, Pin = 0 dBm, 1/2 Duty Cycle Maximum Available Power Gain4 at VCE = 3 V, IC = 100 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 100 mA, f = 2 GHz Collector Efficiency, 3.6 V, ICQ = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Cycle Gain Bandwidth at VCE = 3 V, IC = 100 mA, f = 0.5 GHz Feedback Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz dBm dB dBm dB % GHz pF 16 5.0 UNITS nA nA 40 60 26.0 12.0 12.0 6.5 60 20 1.0 1.5 MIN NE664M04 M04 2SC5754 TYP MAX 1000 1000 100
DC
IEBO hFE P1dB GL MAG |S21E|2 c fT Cre
Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan 4. MAG = |S21|
|S12|
RF
(K -
K 2- 1
).
California Eastern Laboratories
+0.11-0.05
+0.1
1.30
NE664M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 13 5.0 1.5 500 735 150 -65 to +150
ORDERING INFORMATION
PART NUMBER NE664M04-T2-A QUANTITY 3k pcs./reel
THERMAL RESISTANCE
SYMBOLS Rth j-a1 Rth j-a2 PARAMETERS Junction to Ambient Resistance
1
UNITS RATINGS C/W 170 570
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
Junction to Ambient Resistance2 C/W
Note: 1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB. 2. Stand alone device in free air.
APPLICATIONS
Bluetooth Power Class 1 f = 2.4 GHz
T80
R57
0 dBm
13 dBm
22 dBm
NE663M04
NE664M04
SS Cordless Phone f = 2.4 GHz
R57
20 dBm
26 dBm
NE664M04
DCS1800 (GSM1800) Cellular Phone f = 1.8 GHz
R55
R57
A
3 9Z 00 1
5 dBm
16 dBm
25 dBm
35 dBm
NE678M04
NE664M04
NE5520379A (MOS FET)
Cordless Phone f = 0.9 GHz
TH
R57
n3 dBm
9 dBm
25 dBm
NE68019 (3-pin TUSMM)
NE664M04
NE664M04 TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
Reverse Tramsfer Capacitance, Cre (pF)
1000
2.0 f = 1 MHz
Total Power Dissipation, Ptot (mW)
Mounted on Polyimide PCB
800 (38 x 38 mm, t = 0.4 mm)
735
1.5
600
1.0
400
205
Stand alone device in free air
0.5
200
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature, TA (C)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
1000 100 10 1 0.1 0.01 0.001 0.5 VCE = 3 V
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
450 IB : 0.5 mA step 400 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA IB = 0.5 mA 5 6
Collector Current, IC (mA)
Collector Current, IC (mA)
350 300 250 200 150 100 50
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000 VCE = 3 V
DC Current Gain hFE
100
10 1
10
100
1000
Collector Current, IC (mA)
NE664M04 TYPICAL PERFORMANCE CURVES (TA = 25C)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
25
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
35
VCE = 3 V IC = 100 mA
Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
Gain Bandwidth Product, fT (GHz)
VCE = 3 V f = 0.5 GHz
20
30 25 20 15 10 5 0
MSG MAG
15
10
5
|S21e|2
1 10
0 1
10
100
1000
Collector Current, IC (mA)
Frequency, f (Hz)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20
VCE = 3 V f = 1 GHz
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20
VCE = 3 V f = 2 GHz
Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
15
Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
MSG
MAG
15 MSG 10 MAG
|S21e|
10
2
5
5
|S21e|2
0
1
10
100
1000
0
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20
Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
VCE = 3 V f = 2.5 GHz
15
10
MSG
MAG
5
|S21e|2
0 1 10 100 1000
Collector Current, IC (mA)
NE664M04 TYPICAL PERFORMANCE CURVES (TA = 25C)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER
30 25 20 GP 15 10 5 0 -15 c -10 -5 0 5 10 VCE = 3.2 V, f = 0.9 GHz ICq = 20 mA, 1/2 Duty 300
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER
30 300 VCE = 3.2 V, f = 2.4 GHz ICq = 20 mA, 1/2 Duty Pout 20 IC 15 10 5 c 0 -5 GP 150 100 50 0 25 200 250
Collector Current, IC (mA) Collector Efficiency, C (%)
Pout IC 200 150 100 50 0 15
0
5
10
15
20
Input Power, Pin (dBm)
Input Power, Pin (dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER
30 25 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty 300 250 Pout 20 IC 15 GP 10 5 c 0 -10 -5 0 5 10 15 0 20 100 50 150 200
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER
30 25 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Pout 20 IC 15 GP 10 5 c 0 -10 -5 0 5 10 15 0 20 150 100 50 200 300 250
Collector Current, IC (mA) Collector Efficiency, C (%)
Input Power, Pin (dBm)
Input Power, Pin (dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER
30 25 VCE = 3.6 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty 300
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER
30 25 Pout 20 IC 15 10 5 c 0 -10 GP 150 100 50 0 20 200 VCE = 3.6 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty 300 250
Collector Current, IC (mA) Collector Efficiency, C (%)
Pout 20 IC 15 GP 10 5 c 0 -10 -5 0 5 10 15 0 20 100 50 150 200
-5
0
5
10
15
Input Power, Pin (dBm)
Input Power, Pin (dBm)
Collector Current, IC (mA) Collector Efficiency, C (%)
Output Power, Pout (dBm) Power Gain, Gp (dB)
Output Power, Pout (dBm) Power Gain, Gp (dB)
250
Collector Current, IC (mA) Collector Efficiency, C (%)
Output Power, Pout (dBm) Power Gain, Gp (dB)
Output Power, Pout (dBm) Power Gain, Gp (dB)
Collector Current, IC (mA) Collector Efficiency, C (%)
Output Power, Pout (dBm) Power Gain, Gp (dB)
Output Power, Pout (dBm) Power Gain, Gp (dB)
250
25
NE664M04 LARGE SIGNAL IMPEDANCES
FREQUENCY f (GHz) 0.9 1.8 2.4 COLLECTOR TO EMITTER VOLTAGE VCE (V) 2.8 to 3.6 2.8 to 3.6 2.8 to 3.6 SOURCE IMPEDANCE ZS () 8.4 - 5.2j 6.3 - 16.4j 5.9 - 22.1j LOAD IMPEDANCE ZL () 15.1- 4.3j 15.8- 6.9j 15.2- 17.9j
f = 0.9 GHz
ZL ZS
RF input line GND
ZS
B E
E C
GND
RF output line
Tr. ZL
ZL ZS
f = 1.8 GHz
f = 2.4 GHz
ZL ZS
ZL ZS
NE664M04 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25
90
j100
S11
120
60
150
j10
30
0
10
25
50
100
0
180
0
-j10
-150
S22
-j25 -j50 -j100
-30 0.200 to 12.000GHz by 0.100 -120 -90 -60
0.200 to 12.000GHz by 0.100
NE664M04 VC = 1 V, IC = 10 mA
FREQUENCY GHz 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 MAG 0.784 0.801 0.810 0.812 0.820 0.827 0.834 0.838 0.845 0.850 0.855 0.861 0.866 0.874 0.881 0.889 0.898 0.905 0.911 0.916 0.917 0.926 0.923 0.931 S11 ANG -161.6 178.1 166.2 157.2 149.0 141.5 133.6 125.9 118.0 110.4 102.3 95.2 88.6 82.3 76.5 72.0 67.3 63.5 60.2 56.1 52.2 48.4 44.4 40.0 MAG 6.573 3.389 2.271 1.710 1.378 1.163 1.013 0.901 0.816 0.743 0.678 0.624 0.573 0.530 0.485 0.451 0.422 0.391 0.360 0.337 0.321 0.305 0.295 0.290 S21 ANG 95.1 77.6 65.1 54.4 44.3 35.2 26.1 17.1 8.6 0.1 - 7.5 - 14.9 - 21.9 - 28.0 - 34.0 - 38.9 - 44.1 - 48.5 - 52.4 - 56.3 - 60.0 - 64.1 - 66.4 - 69.9 MAG 0.075 0.081 0.084 0.090 0.097 0.109 0.119 0.133 0.146 0.160 0.170 0.175 0.190 0.195 0.198 0.203 0.211 0.205 0.208 0.208 0.209 0.210 0.208 0.221 S12 ANG 19.0 16.3 18.9 18.1 20.8 20.6 18.7 16.2 11.6 8.6 5.7 0.9 - 3.9 - 7.7 - 12.6 - 17.2 - 21.6 - 25.6 - 30.2 - 33.9 - 38.7 - 42.2 - 46.5 - 50.7 MAG 0.491 0.454 0.460 0.467 0.476 0.482 0.498 0.508 0.525 0.546 0.570 0.599 0.625 0.650 0.676 0.696 0.716 0.733 0.740 0.768 0.782 0.793 0.811 0.816 S22 ANG -138.6 -164.9 -178.3 172.5 165.3 158.0 151.0 143.9 136.4 128.9 121.9 115.4 108.6 102.4 95.6 89.6 83.0 76.4 70.9 63.4 58.1 53.2 49.2 46.3 K 0.32 0.60 0.85 1.03 1.16 1.20 1.22 1.22 1.19 1.17 1.19 1.18 1.15 1.14 1.14 1.13 1.09 1.11 1.11 1.12 1.12 1.09 1.11 1.06 MAG1 (dB) 19.44 16.23 14.33 11.77 9.14 7.60 6.47 5.49 4.84 4.15 3.40 2.93 2.44 2.05 1.58 1.29 1.14 0.76 0.34 0.01 - 0.24 - 0.27 - 0.52 - 0.27
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE664M04 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25
90
j100
120
S11
60
150
j10
30
S22
0
10
25
50
100
0
180
0
-j10
-150
0.200 to 12.000GHz by 0.100
-j25 -j50 -j100
-30 0.200 to 12.000GHz by 0.100 -120 -90 -60
NE664M04 VC = 2 V, IC = 100 mA
FREQUENCY GHz 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 MAG 0.808 0.812 0.819 0.822 0.830 0.831 0.834 0.837 0.836 0.843 0.843 0.851 0.857 0.865 0.866 0.874 0.883 0.891 0.900 0.902 0.914 0.918 0.917 0.917 S11 ANG 177.3 167.0 158.7 151.3 143.8 137.2 129.9 122.8 115.1 107.7 100.1 93.1 86.5 80.8 75.4 70.6 66.5 62.6 59.2 55.6 51.8 48.1 44.1 39.7 MAG 9.415 4.762 3.176 2.387 1.925 1.616 1.410 1.256 1.138 1.035 0.945 0.868 0.800 0.742 0.688 0.641 0.591 0.551 0.517 0.491 0.456 0.435 0.419 0.413 S21 ANG 90.1 77.9 68.6 60.0 51.6 43.8 36.0 27.7 19.7 12.1 4.4 - 2.5 - 9.0 - 15.3 - 21.2 - 26.6 - 32.4 - 37.1 - 43.0 - 47.2 - 52.1 - 56.2 - 60.1 - 63.7 MAG 0.027 0.046 0.065 0.083 0.106 0.123 0.140 0.159 0.175 0.188 0.197 0.207 0.212 0.222 0.225 0.225 0.227 0.231 0.221 0.226 0.219 0.219 0.219 0.229 S12 ANG 50.0 62.1 57.6 53.6 48.0 43.3 37.1 30.9 25.2 18.1 11.6 6.4 - 0.2 - 4.7 - 10.8 - 15.7 - 19.8 - 25.9 - 30.6 - 34.5 - 39.4 - 43.8 - 47.4 - 50.6 MAG 0.652 0.650 0.657 0.662 0.666 0.670 0.669 0.672 0.680 0.691 0.701 0.715 0.731 0.745 0.751 0.761 0.772 0.774 0.788 0.796 0.805 0.810 0.822 0.822 S22 ANG -167.8 176.3 166.5 158.5 151.4 144.1 137.0 129.3 121.7 114.7 108.2 101.9 95.8 90.2 84.5 78.7 72.4 66.3 60.8 54.7 49.5 45.5 41.9 38.8 K 0.87 1.04 1.07 1.08 1.06 1.07 1.07 1.06 1.06 1.06 1.06 1.06 1.06 1.06 1.07 1.07 1.07 1.06 1.06 1.07 1.06 1.05 1.06 1.05 MAG1 (dB) 25.50 18.88 15.33 12.85 11.12 9.60 8.45 7.52 6.61 5.96 5.25 4.71 4.23 3.80 3.29 2.94 2.56 2.24 2.17 1.80 1.69 1.54 1.31 1.13
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE664M04 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25
90
j100
S11
S22
120
60
150
30
j10
0
10
25
50
100
0
180
0
-j10
-150
0.200 to 12.000GHz by 0.100
-30 0.200 to 12.000GHz by 0.100
-j25 -j50
-j100
-120 -90
-60
NE664M04 VC = 3 V, IC = 200 mA
FREQUENCY GHz 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 MAG 0.801 0.808 0.815 0.819 0.822 0.830 0.832 0.831 0.835 0.837 0.842 0.848 0.853 0.862 0.868 0.873 0.881 0.890 0.895 0.903 0.911 0.915 0.919 0.918 S11 ANG 175.9 166.3 158.4 150.9 143.9 136.8 129.7 122.5 115.0 107.6 100.2 93.0 86.4 80.5 75.4 70.4 66.5 62.7 59.3 55.7 52.0 48.3 44.1 39.8 MAG 9.856 4.975 3.310 2.483 1.996 1.676 1.461 1.299 1.171 1.069 0.979 0.896 0.828 0.764 0.707 0.660 0.611 0.572 0.532 0.498 0.466 0.445 0.430 0.426 S21 ANG 89.7 77.5 68.2 59.8 51.6 43.6 35.8 27.6 19.8 12.0 4.4 - 2.8 - 9.1 - 15.4 - 21.5 - 26.8 - 32.7 - 36.9 - 42.0 - 47.9 - 51.7 - 56.3 - 60.1 - 64.6 MAG 0.024 0.044 0.066 0.084 0.102 0.122 0.138 0.156 0.173 0.187 0.198 0.211 0.214 0.216 0.226 0.231 0.223 0.226 0.226 0.219 0.224 0.219 0.226 0.229 S12 ANG 66.8 68.0 62.1 57.6 52.3 43.9 39.2 32.6 26.9 19.5 11.8 7.0 1.2 - 4.7 - 9.8 - 15.6 - 20.4 - 24.0 - 30.2 - 33.8 - 38.3 - 43.0 - 46.2 - 49.5 MAG 0.624 0.632 0.633 0.638 0.644 0.648 0.653 0.656 0.662 0.672 0.683 0.698 0.711 0.724 0.736 0.748 0.750 0.764 0.771 0.779 0.793 0.794 0.810 0.811 S22 ANG -169.4 175.5 166.7 158.1 150.8 144.1 136.7 129.3 122.1 114.9 108.2 102.1 96.2 90.6 85.1 78.9 72.7 67.2 61.0 55.0 48.9 45.8 41.6 39.3 K 1.01 1.07 1.07 1.08 1.09 1.07 1.07 1.07 1.07 1.06 1.06 1.06 1.06 1.06 1.06 1.06 1.07 1.07 1.07 1.07 1.06 1.06 1.05 1.05 MAG1 (dB) 25.43 18.85 15.41 12.95 11.11 9.80 8.62 7.59 6.75 6.05 5.44 4.83 4.32 3.92 3.47 3.08 2.72 2.45 2.11 1.91 1.64 1.53 1.40 1.34
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/04/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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